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Results of the Monte Carlo calculation of one- and two-dimensional distributions of particles and damage ion implanted dopants in silicon
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- http://id.worldcat.org/fast/1025819
- http://experiment.worldcat.org/entity/work/data/18316488#Topic/monte_carlo_methode_de
- http://id.worldcat.org/fast/1112125
- http://id.worldcat.org/fast/978591
- http://experiment.worldcat.org/entity/work/data/18316488#Topic/ions_implantation_simulation_par_ordinateur
- http://id.loc.gov/authorities/subjects/sh85119890
- http://id.loc.gov/authorities/subjects/sh85067801
- http://id.loc.gov/authorities/subjects/sh85087032
- http://experiment.worldcat.org/entity/work/data/18316488#Topic/semiconducteurs_dopage_simulation_par_ordinateur
http://schema.org/name
- "Results of the Monte Carlo calculation of one- and two-dimensional distributions of particles and damage ion implanted dopants in silicon"@en
- "Results of the Monte Carlo Calculation of One- and Two-Dimensional Distributions of Particles and Damage : Ion Implanted Dopants in Silicon"
- "Results of the Monte Carlo calculation of one- and two-dimensional distributions of particles and damage : ion implanted dopants in silicon"
- "Results of the Monte Carlo Calculation of one- and two-dimensional distributions of particles and damage ion implanted dopants in silicon"