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http://worldcat.org/entity/work/id/1909439567

Development of a Planar Heterojunction Bipolar Transistor for Very High Speed Logic

Graded regions of n-(Ga, In)As and p-Ga(As, Sb) were incorporated side-by-side as emitter and base contacts respectively, into an npn (Al, Ga)As/GaAs heterostructure bipolar transistor (HBT). The process involved two separate MBE growths, leading to base contact regions that were self-aligned to the emitter mesas. The devices could be easily probed with pressure contacts even prior to any metallization, and excellent characteristics were obtained after final metallization.

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  • "Graded regions of n-(Ga, In)As and p-Ga(As, Sb) were incorporated side-by-side as emitter and base contacts respectively, into an npn (Al, Ga)As/GaAs heterostructure bipolar transistor (HBT). The process involved two separate MBE growths, leading to base contact regions that were self-aligned to the emitter mesas. The devices could be easily probed with pressure contacts even prior to any metallization, and excellent characteristics were obtained after final metallization."@en
  • "The objective of this project was to fabricate multiple heterostructure bipolar transistors in semi-insulating GaAs substrates. During the first year of effort, molecular beam epitaxial growth of doped aluminum-gallium arsenide (AlGaAs) gallium arsenide (GaAs) heterojunctions was carried out. GaAs layers were doped n-type with silicon from the background (1E16) up to 2E18 and p-type with beryllium up to 1E19. N-type AlGaAs was grown up to 30% aluminum composition and doped with silicon to 1.5E18. Tools were developed for lateral structuring of transistors such as beryllium ion implantation, reactive sputtering and thermal annealing. Single devices were grown, fabricated by mesa etching and tested. Current-voltage characteristics shows evidence of excess recombination current. (Author)."@en
  • "The objective of this research project is to develop heterostructure bipolar transistors for very-high-speed logic. During the second year of effort, significant progress was made on (Al, Ga)As/GaAs HBTs of both emitter-down and emitter-up configurations, with current gains of 10 or greater being observed in both cases for base dopings which exceed emitter dopings. Structural modifications were evaluated which led to increased injection and reduced recombination currents. Annealing systems were constructed and characterized for activation of Be ion-implantations. Promising initial studies of (In, Ga)P/GaAs HBTs has led to their inclusion in this research project for the third year of effort."@en

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  • "Development of a Planar Heterojunction Bipolar Transistor for Very High Speed Logic"@en

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