Linked Data Explorerhttp://worldcat.org/entity/work/id/430771265
Silicon molecular beam epitaxy
This two-volume work covers recent developments in the single crystal growth, by molecular beam epitaxy, of materials compatible with silicon, their physical characterization, and device application. Papers are included on surface physics and related vacuum synthesis techniques such as solid phase epitaxy and ion beam epitaxy. A selection of contents: Volume I. SiGe Superlattices. SiGe strained layer superlattices (G. Abstreiter). Optical properties of strained GeSi superlattices grown on (001)Ge (T.P. Pearsall et al.). Growth and characterization of SiGe atomic layer superlattic.
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http://schema.org/about
- http://experiment.worldcat.org/entity/work/data/430771265#Topic/silicon_crystals_congresses
- http://experiment.worldcat.org/entity/work/data/430771265#Topic/crystal_growth_congresses
- http://id.worldcat.org/fast/1024729
- http://experiment.worldcat.org/entity/work/data/430771265#Topic/microstructure_congresses
- http://id.loc.gov/authorities/subjects/sh85086573
- http://id.worldcat.org/fast/884619
- http://experiment.worldcat.org/entity/work/data/430771265#Topic/molecular_beam_epitaxy_congresses
- http://id.worldcat.org/fast/1020118
- http://experiment.worldcat.org/entity/work/data/430771265#Topic/technology_&_engineering_mechanical
- http://id.loc.gov/authorities/subjects/sh2010101552
- http://experiment.worldcat.org/entity/work/data/430771265#Topic/superlattices_as_materials_congresses
- http://id.loc.gov/authorities/subjects/sh2008101975
- http://id.loc.gov/authorities/subjects/sh2008111514
- http://experiment.worldcat.org/entity/work/data/430771265#Topic/eletricidade_e_eletronica_fisica
- http://id.loc.gov/authorities/subjects/sh2008107537
- http://id.loc.gov/authorities/subjects/sh85122512
- http://id.loc.gov/authorities/subjects/sh2010112587
- http://id.worldcat.org/fast/1138901
- http://id.worldcat.org/fast/1118631
- http://id.worldcat.org/fast/1118668
http://schema.org/description
- "This two-volume work covers recent developments in the single crystal growth, by molecular beam epitaxy, of materials compatible with silicon, their physical characterization, and device application. Papers are included on surface physics and related vacuum synthesis techniques such as solid phase epitaxy and ion beam epitaxy. A selection of contents: Volume I. SiGe Superlattices. SiGe strained layer superlattices (G. Abstreiter). Optical properties of strained GeSi superlattices grown on (001)Ge (T.P. Pearsall et al.). Growth and characterization of SiGe atomic layer superlattic."@en