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http://worldcat.org/entity/work/id/475923494

Growth of 3C-SiC on (111)Si using hot-wall chemical vapor deposition

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  • "The thickness of the films was assessed through Fourier Transform infrared (FTIR) spectroscopy, and confirmed (in the case of growth on poly-Si seed layers) by cross-section scanning electron microscopy (SEM). The SEM cross-sections were also used to investigate the 3C-SiC/oxide interface. The surface morphology of the films was inspected via Nomarsky interference optical microscopy, atomic force microscopy (AFM), and SEM. The crystalline quality of the films was determined through X-ray diffraction (XRD)."

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  • "Growth of 3C-SiC on (111)Si using hot-wall chemical vapor deposition"

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