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<http://worldcat.org/entity/work/id/4885827> <http://schema.org/contributor> <http://id.loc.gov/authorities/names/n78087581> .
<http://worldcat.org/entity/work/id/4885827> <http://schema.org/contributor> <http://id.loc.gov/authorities/names/n79105937> .
<http://worldcat.org/entity/work/id/4885827> <http://schema.org/about> <http://id.worldcat.org/fast/1017624> .
<http://worldcat.org/entity/work/id/4885827> <http://schema.org/contributor> <http://viaf.org/viaf/134172137> .
<http://worldcat.org/entity/work/id/4885827> <http://schema.org/about> <http://id.loc.gov/authorities/subjects/sh85067117> .
<http://worldcat.org/entity/work/id/4885827> <http://schema.org/about> <http://id.loc.gov/authorities/subjects/sh85084066> .
<http://worldcat.org/entity/work/id/4885827> <http://www.w3.org/1999/02/22-rdf-syntax-ns#type> <http://schema.org/Book> .
<http://worldcat.org/entity/work/id/4885827> <http://schema.org/workExample> <http://www.worldcat.org/oclc/2455983> .
<http://worldcat.org/entity/work/id/4885827> <http://schema.org/name> "High and low threshold P-channel metal oxide semiconductor process and description of microelectronics facility"@en .
<http://worldcat.org/entity/work/id/4885827> <http://www.w3.org/1999/02/22-rdf-syntax-ns#type> <http://schema.org/CreativeWork> .
<http://worldcat.org/entity/work/id/4885827> <http://schema.org/contributor> <http://viaf.org/viaf/146202023> .
<http://worldcat.org/entity/work/id/4885827> <http://schema.org/contributor> <http://worldcat.org/entity/person/id/2719698498> .
<http://worldcat.org/entity/work/id/4885827> <http://schema.org/about> <http://id.worldcat.org/fast/975535> .
<http://worldcat.org/entity/work/id/4885827> <http://schema.org/workExample> <http://www.worldcat.org/oclc/760888091> .