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Semiconductor measurement technology

Contents: Resistivity; dopant profiles, crystal defects and contaminants, insulator films, test patterns, photolithography, metallization, wafer inspection and test, die attachment, interconnection bonding, hermeticity, microwave diodes, high-frequency measurements.

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  • "Contents: Resistivity; dopant profiles, crystal defects and contaminants, insulator films, test patterns, photolithography, metallization, wafer inspection and test, die attachment, interconnection bonding, hermeticity, microwave diodes, high-frequency measurements."@en
  • "Contents: Resistivity; Physical analysis methods; Test structure applications; Materials and procedures for wafer processing; Photolithography; Test patterns; Interconnection bonding; Hermeticity; Device inspection and test; Thermal properties of devices; References."@en
  • "This progress report describes NBS activities directed toward the development of methods of measurement for semiconductor materials, process control, and devices. Both in-house and contract efforts are included. The emphasis is on silicon device technologies. Principal accomplishments during this reporting period included (1) development of theoretical expressions for electron mobility in silicon based on combinations of scattering mechanisms; (2) successful low-temperature processing of MOS capacitors to permit measurement of thermally stimulated current and capacitance without subjecting the specimens to potentially degrading heat treatments; (3) completion of a study of the thermodynamics of reactions in an oxidation furnace tube which provides a basis for models of the effect of water vapor, chlorine, and tube wall conditions on sodium contamination levels; (4) development of a rapid, nondestructive method for reverse decoration of defects in passivation overcoats; (5) development of the theoretical basis for accurate measurement of small line widths by analysis of a spatially filtered image of the line; (6) extension of the acoustic emission technique to the nondestructive testing of tape-bonded chips and hybrid components; and (7) analysis of the results of a first exploratory interlaboratory evaluation of the radioisotope method for testing hermeticity of semiconductor devices."@en
  • ";Contents: Resistivity; dopant profiles; Crystal defects and contaminants; Oxide film characterization; Test patterns; Photolithography; Epitaxial layer thickness; Wafer inspection and test; Interconnection bonding; Hermeticity; Thermal properties of devices."@en

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  • "Semiconductor measurement technology"@en
  • "Semiconductor Measurement Technology - Progress Report, July 1 to December 31, 1975"
  • "Semiconductor Measurement Technology"@en

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