"Carrier mobility." . . "Defects(materials)" . . "Test methods." . . "Surface properties." . . "Hermetic seals." . . "Bonded joints." . . "X ray spectroscopy." . . "Semiconducting films." . . "Test Facilities, Equipment and Methods." . . "Thermal properties." . . "Nondestructive testing." . . "Reliability(electronics)" . . "Sapphire." . . "Instrumentation." . . "Fabrication metallurgy." . . "NATIONAL BUREAU OF STANDARDS GAITHERSBURG MD." . . "Measurement." . . "Quality control." . . "Microwave equipment." . . . . . . . . . . . "Contents: Resistivity; dopant profiles, crystal defects and contaminants, insulator films, test patterns, photolithography, metallization, wafer inspection and test, die attachment, interconnection bonding, hermeticity, microwave diodes, high-frequency measurements."@en . . . . . "Semiconductor measurement technology"@en . . . . . . "Contents: Resistivity; Physical analysis methods; Test structure applications; Materials and procedures for wafer processing; Photolithography; Test patterns; Interconnection bonding; Hermeticity; Device inspection and test; Thermal properties of devices; References."@en . . . . "Semiconductor Measurement Technology - Progress Report, July 1 to December 31, 1975" . . . . . . . . . . . . . . . . . . . . . . . . . "Semiconductor Measurement Technology"@en . . . . "This progress report describes NBS activities directed toward the development of methods of measurement for semiconductor materials, process control, and devices. Both in-house and contract efforts are included. The emphasis is on silicon device technologies. Principal accomplishments during this reporting period included (1) development of theoretical expressions for electron mobility in silicon based on combinations of scattering mechanisms; (2) successful low-temperature processing of MOS capacitors to permit measurement of thermally stimulated current and capacitance without subjecting the specimens to potentially degrading heat treatments; (3) completion of a study of the thermodynamics of reactions in an oxidation furnace tube which provides a basis for models of the effect of water vapor, chlorine, and tube wall conditions on sodium contamination levels; (4) development of a rapid, nondestructive method for reverse decoration of defects in passivation overcoats; (5) development of the theoretical basis for accurate measurement of small line widths by analysis of a spatially filtered image of the line; (6) extension of the acoustic emission technique to the nondestructive testing of tape-bonded chips and hybrid components; and (7) analysis of the results of a first exploratory interlaboratory evaluation of the radioisotope method for testing hermeticity of semiconductor devices."@en . . . . . . . . . . . . . . . . . . . ";Contents: Resistivity; dopant profiles; Crystal defects and contaminants; Oxide film characterization; Test patterns; Photolithography; Epitaxial layer thickness; Wafer inspection and test; Interconnection bonding; Hermeticity; Thermal properties of devices."@en . . . . . "Cooling." . . "Transistors." . . "Solid state physics." . . "Solid State Physics." . "Wafers." . . "Processing." . . "Crystal defects." . . "Chemical analysis." . . "Silicon." . . "Electron microscopy." . . "Integrated circuits." . . "Materials." . . "Electrical and electronic equipment." . . "Electrical and Electronic Equipment." . "Mathematical models." . . "NATIONAL BUREAU OF STANDARDS WASHINGTON D C ELECTRONIC TECHNOLOGY DIV." . . "Manufacturing." . . "Metal oxide semiconductors." . . "Test equipment." . . "Fabrication." . . "Auger electron spectroscopy." . . "Silicon dioxide." . . "Electrical resistance." . . "Germanium." . . "Semiconductor diodes." . . "Semiconductor devices." . . "Photolithography." . . "Experimental design." . . "Thickness." . . "NATIONAL BUREAU OF STANDARDS WASHINGTON DC ELECTRONIC TECHNOLOGY DIV." . . "Solid state electronics." . . "NATIONAL BUREAU OF STANDARDS WASHINGTON D C." . . "Doping." . . "Packaging." . . "Capacitors." . . "Test facilities." . . . . "Semiconductors." . . "Microelectronics." . . "Electrical properties." . . "Acoustic emissions." . .