WorldCat Linked Data Explorer

Turtle N-Triple JSON-LD RDF/XML HTML Contact Us Home

http://worldcat.org/entity/work/id/793567742

Rare-earth implanted MOS devices for silicon photonics microstructural, electrical and optoelectronic properties

This book concentrates on the microstructural, electric and optoelectronic properties of rare-earth implanted MOS structures and their use as light emitters in potential applications. It describes the structural formation processes in the gate oxide during fabrication and under operation, how this microstructure development will affect the electrical device performance and how both microstructure and electrical characteristics determine the optoelectronic features of the light emitters. However, most of the discussed physical processes as well as the described fabrication methods and device ch.

Open All Close All

type

about

http://schema.org/about

author

contributor

creator

description

http://schema.org/description

  • "The book concentrates on the microstructural, electric and optoelectronic properties of rare-earth implanted MOS structures and their use as light emitters in potential applications. It describes the structural formation processes in the gate oxide during fabrication and under operation, how this microstructure development will affect the electrical device performance and how both microstructure and electrical characteristics determine the optoelectronic features of the light emitters. However, most of the discussed physical processes as well as the described fabrication methods and device characterization techniques are of general interest and are beyond the scope of this type of light emitter. The book will be of value to engineers, physicists, and scientists dealing either with Si based photonics in particular or optoelectronic device fabrication and characterization in general."
  • "This book concentrates on the microstructural, electric and optoelectronic properties of rare-earth implanted MOS structures and their use as light emitters in potential applications. It describes the structural formation processes in the gate oxide during fabrication and under operation, how this microstructure development will affect the electrical device performance and how both microstructure and electrical characteristics determine the optoelectronic features of the light emitters. However, most of the discussed physical processes as well as the described fabrication methods and device ch."@en

genre

http://schema.org/genre

  • "Electronic books"@en

name

http://schema.org/name

  • "Rare-Earth Implanted MOS Devices for Silicon Photonics Microstructural, Electrical and Optoelectronic Properties"
  • "Rare-earth implanted mos devices for silicon photonics : microstructural, electrical and"
  • "Rare-earth implanted MOS devices for silicon photonics microstructural electrical and optoelectronic properties"
  • "Rare-earth implanted MOS devices for silicon photonics microstructural, electrical and optoelectronic properties"
  • "Rare-earth implanted MOS devices for silicon photonics microstructural, electrical and optoelectronic properties"@en
  • "Rare-earth implanted MOS devices for silicon photonics : microstructural, electrical and optoelectronic properties"@en
  • "Rare-Earth Implanted MOS Devices for Silicon Photonics : Microstructural, Electrical and Optoelectronic Properties"

workExample