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Molecular beam epitaxy : fundamentals and current status

Molecular Beam Epitaxy describes a technique in wide-spread use for the production of high-quality semiconductor devices. This monograph discusses the most important aspects of an MBE apparatus, the physics and chemistry of the crystallization of various materials and device structures, and the characterization methods that relate the structural para- meters of the grown (or growing) field or structure to the technologically relevant parameters of the crystallization procedure. In the present second edition two new fields of activity, which emerged in the 1990s have been addressed. These are: (i) crystallization of as-grown low-dimensional heterostructures, mainly quantum wires and quantum dots, and (ii) in-growth control of the MBE crystallization process of strained-layer structures in order to achieve the highly pre- ferred mode of crystallization, the perfect layer-by-layer growth. A substantial part of the "first edition text", which lost its present-day interest has been removed to have sufficiant space for the most current topics in MBE.

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  • "Molecular Beam Epitaxy describes a technique in wide-spread use for the production of high-quality semiconductor devices. This monograph discusses the most important aspects of an MBE apparatus, the physics and chemistry of the crystallization of various materials and device structures, and the characterization methods that relate the structural para- meters of the grown (or growing) field or structure to the technologically relevant parameters of the crystallization procedure. In the present second edition two new fields of activity, which emerged in the 1990s have been addressed. These are: (i) crystallization of as-grown low-dimensional heterostructures, mainly quantum wires and quantum dots, and (ii) in-growth control of the MBE crystallization process of strained-layer structures in order to achieve the highly pre- ferred mode of crystallization, the perfect layer-by-layer growth. A substantial part of the "first edition text", which lost its present-day interest has been removed to have sufficiant space for the most current topics in MBE."@en
  • "Molecular Beam Epitaxy describes a technique in wide-spread use for the production of high-quality semiconductor devices. This monograph discusses the most important aspects of an MBE apparatus, the physics and chemistry of the crystallization of various materials and device structures, and the characterization methods that relate the structural para- meters of the grown (or growing) field or structure to the technologically relevant parameters of the crystallization procedure. In the present second edition two new fields of activity, which emerged in the 1990s have been addressed. These are: (i) crystallization of as-grown low-dimensional heterostructures, mainly quantum wires and quantum dots, and (ii) in-growth control of the MBE crystallization process of strained-layer structures in order to achieve the highly pre- ferred mode of crystallization, the perfect layer-by-layer growth. A substantial part of the "first edition text", which lost its present-day interest has been removed to have sufficiant space for the most current topics in MBE."
  • "This first-ever monograph on molecular beam epitaxy (MBE) gives a comprehensive presentation of recent developments in MBE, as applied to crystallization of thin films and device structures of different semiconductor materials. MBE is a high-vacuum technology characterized by relatively low growth temperature, ability to cease or initiate growth abruptly, smoothing of grown surfaces and interfaces on an atomic scale, and the unique facility for in situ analysis of the structural parameters of the growing film. The excellent exploitation parameters of such MBE-produced devices as quantum-well lasers, high electron mobility transistors, and superlattice avalanche photodiodes have caused this technology to be intensively developed. The main text of the book is divided into three parts. The first presents and discusses the more important problems concerning MBE equipment. The second discusses the physico-chemical aspects of the crystallization processes of different materials (mainly semiconductors) and device structures. The third part describes the characterization methods which link the physical properties of the grown film or structures with the technological parameters of the crystallization procedure. Latest achievements in the field are emphasized, such as solid source MBE, including silicon MBE, gas source MBE, especially metalorganic MBE, phase-locked epitaxy and atomic-layer epitaxy, photoassisted molecular layer epitaxy and migration enhanced epitaxy."

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  • "Electronic books"

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  • "Molecular Beam Epitaxy : Fundamentals and Current Status"
  • "Molecular Beam Epitaxy Fundamentals and Current Status"
  • "Molecular beam epitaxy : Fundamentals and current status"
  • "Molecular beam epitaxy : fundamentals and current status"@en
  • "Molecular beam epitaxy : fundamentals and current status"

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