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Development of a High Current High Temperature SiC MOSFET based Solid-State Power Controller
Solid-State Power Controllers (SSPCs) are critical components in the development of electric aircraft and must be small in size, fast in response, and have high reliability. They are also proposed for use in microgrids to improve the power quality and system reliability. The development of Silicon Carbide (SiC) semiconductor switches provides a series of improvements for the SSPCs in both electrical and thermal performances. In the proposed SSPC design investigation, SiC MOSFETs die are mounted on cast-aluminum traces, under which are an aluminum nitride (AlN) layer and an aluminum composite base plate. The concept of i2t and its application in solid state protection is discussed in detail. Transient thermal characterizations of SiC MOSFETs are provided for a nearly-all-aluminum package by Finite Element Analysis (FEA). The SSPC is targeted for 120A nominal, 1200A fault current, 270V DC system, and working at 105°C environment with a maximum 350°C transient junction temperature capability.
- "Solid-State Power Controllers (SSPCs) are critical components in the development of electric aircraft and must be small in size, fast in response, and have high reliability. They are also proposed for use in microgrids to improve the power quality and system reliability. The development of Silicon Carbide (SiC) semiconductor switches provides a series of improvements for the SSPCs in both electrical and thermal performances. In the proposed SSPC design investigation, SiC MOSFETs die are mounted on cast-aluminum traces, under which are an aluminum nitride (AlN) layer and an aluminum composite base plate. The concept of i2t and its application in solid state protection is discussed in detail. Transient thermal characterizations of SiC MOSFETs are provided for a nearly-all-aluminum package by Finite Element Analysis (FEA). The SSPC is targeted for 120A nominal, 1200A fault current, 270V DC system, and working at 105°C environment with a maximum 350°C transient junction temperature capability."@en
- "Development of a High Current High Temperature SiC MOSFET based Solid-State Power Controller"@en