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Silicide Formation and Schottky Barrier of Rare-Earth Metals on SI

The objectives of this program are to investigate the electrical properties and growth characteristics of rare-earth silicides that potentially form low energy barriers on n-type Si. A more general objective is to set up Rutherford backscattering spectrometry at UCSD. For the investigation of rare-earth silicides, we concentrate working on ErSi2 (all rare-earth silicides are similar in characteristics and properties, Er is slightly less reactive with oxygen). More recently GdSi2 has also been investigated. We report here the results of our investigation. Generally speaking, we believe that the major problems of rare-earth silicides have been solved. Rutherford backscattering spectrometry is now on-line at UCSD. (Author).

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  • "The objectives of this program are to investigate the electrical properties and growth characteristics of rare-earth silicides that potentially form low energy barriers on n-type Si. A more general objective is to set up Rutherford backscattering spectrometry at UCSD. For the investigation of rare-earth silicides, we concentrate working on ErSi2 (all rare-earth silicides are similar in characteristics and properties, Er is slightly less reactive with oxygen). More recently GdSi2 has also been investigated. We report here the results of our investigation. Generally speaking, we believe that the major problems of rare-earth silicides have been solved. Rutherford backscattering spectrometry is now on-line at UCSD. (Author)."@en
  • "During this period, our activities included the following: The arrival of the General Ionex Tandetron accelerator. We are now setting this machine up for backscattering experiments. We expect to be on-line in a few months. Perfecting of the technique of fabricating pit-free ErSi2 diodes. Measurement barrier heights of Er and ErSi2 on p and n type Si. For p-type Si the measurements were done at room temperature. For n-type Si, the measurements were done at 77 degrees K. Presentation of an invited paper entitled Ion Mixing and Phase Diagrams at the international conference on Ion Beam Modification of Materials, Grenoble, France, August 1982 (see Appendix A). This paper was written in collaboration with Caltech (B.X. Liu and M-A. Nicolet). Presentation of a paper entitled Surface Morphology and Electronic Properties of Erbium Silicide at the annual MRS meeting held in Boston, November 1982 (see Appendix B). (Author)."@en
  • "During this period, our activities included the following: Design and construct mechanical masks for Er (and other thin film) depositions; Completion of the construction of a vacuum annealing furnace. The vacuum chamber is pumped by a turbo-molecular pump and is capable of annealing eight 88) different samples sequentially in one pump-down. The normal operating pressures is <2 x 1- to the -7 torr and the chamber is relatively free from carbon and oxygen contamination; Investigation of annealing Er layers deposited on Si in our new vacuum furnace, and the electronic properties of ErSi2 diodes using mechanical masks, and Acceptance of publication by Applied Physics Letters of our paper entitled Surface Morphology of Erbium Silicides (See Appendix A). (Author)."@en

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  • "Silicide Formation and Schottky Barrier of Rare-Earth Metals on SI"@en

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